NE5512N SPECIFIKACIJE I PRIMJENA
Elektronički dijelovi: NE5512N 
Proizvođač: Philips Semiconductors
Pakiranje:
Aplikacija:
Igle:
Temperatura: Min °C | Maks °C
Veličina: KB
NE5512N PDF
Datasheet PDF : View
NE5512N SLIČNIH MODELA:
- NE5500179A
SILICON POWER - NE5500179A-T1
SILICON POWER - NE5500479A
Discrete - NE5510179A
3.5V OPERATION SILICON POWER MOSFET TRANSMISSION AMPLIFIERS - NE5510179A-T1
3.5V OPERATION SILICON POWER MOSFET TRANSMISSION AMPLIFIERS - NE5510279A
OPERATION SILICON POWER MOSFET GSM1800 TRANSMISSION AMPLIFIERS - NE5510279A-T1
OPERATION SILICON POWER MOSFET GSM1800 TRANSMISSION AMPLIFIERS - NE5511279A
NECS BAND POWER SILICON LD-MOS - NE5511279A-T1
NECS BAND POWER SILICON LD-MOS - NE5511279A-T1-A
BAND POWER SILICON LD-MOS - NE5511279A-T1A
NECS BAND POWER SILICON LD-MOS - NE5511279A-T1A-A
BAND POWER SILICON LD-MOS - NE5512
Dual high-performance operational amplifier - NE5512D
Dual high-performance operational amplifier - NE5512N
Dual high-performance operational amplifier